Strain field in silicon on insulator lines using high resolution x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2713335
Reference8 articles.
1. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
2. Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations
3. High-resolution strain mapping in heteroepitaxial thin-film features
4. X-ray characterization of Si microstructures with high spatial resolution
5. Determination of interfacial strain distribution in quantum-wire structures by synchrotron x-ray scattering
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