Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition-Reference-Cited by-同舟云学术

Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition

Published:2020-12-01 Issue:12 Volume:10 Page:125119
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Maeda Takuya¹^ORCID,Okigawa Mitsuru²,Kato Yuji²,Takahashi Isao²,Shinohe Takashi²

Affiliation:

1. Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510, Japan

2. FLOSFIA Inc., 1-29, Goryo Ohara, Nishikyo, Kyoto 615-8245, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0028985

Reference40 articles.

1. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

2. State-of-the-art technologies of gallium oxide power devices

3. A power device material of corundum-structured α-Ga2O3fabricated by MIST EPITAXY®technique

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

5. High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

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