Band‐edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116437
Reference28 articles.
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lattice-matched growth of high-Sn-content (x∼0.1) Si1−x Sn x layers on Si1−y Ge y buffers using molecular beam epitaxy;Applied Physics Express;2023-04-01
2. Synthesis of heavily Ga-doped Si1−xSnx/Si heterostructures and their valence-band-offset determination;Japanese Journal of Applied Physics;2018-11-26
3. Embedded tin nanocrystals in silicon—an electrical characterization;Nanotechnology;2018-01-05
4. Self-organized lattice-matched epitaxy of Si1−xSnx alloys on (001)-oriented Si, Ge, and InP substrates;Applied Physics Letters;2017-11-06
5. Light emission from silicon with tin-containing nanocrystals;AIP Advances;2015-07
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