Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress-Reference-Cited by-同舟云学术

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

Published:2021-06-21 Issue:25 Volume:118 Page:253501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Narita Tetsuo¹^ORCID,Nagasato Yoshitaka²,Kanechika Masakazu³^ORCID,Kondo Takeshi³,Uesugi Tsutomu³^ORCID,Tomita Kazuyoshi³^ORCID,Ikeda Satoshi²,Yamaguchi Satoshi¹^ORCID,Kimoto Yasuji¹,Kosaki Masayoshi⁴,Oka Tohru⁴^ORCID,Kojima Jun³,Suda Jun³⁵^ORCID

Affiliation:

1. Toyota Central R&D Labs., Inc., Nagakute 480-1192, Japan

2. MIRISE Technologies Corporation, Toyota 470-0309, Japan

3. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8601, Japan

4. Toyoda Gosei Co., Ltd., Ama, Aichi 490-1207, Japan

5. Department of Electronics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0053139

Reference33 articles.

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2. 1.5-kV and 2.2-m $\Omega $ -cm $^{2}$ Vertical GaN Transistors on Bulk-GaN Substrates

3. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

4. D. Shibata , R. Kajitani , M. Ogawa , K. Tanaka , S. Tamura , T. Hatsuda , M. Ishida , and T. Ueda , in IEEE International Electron Devices Meeting ( IEEE, San Francisco, 2016), p. 248.

5. Y. Zhang , M. Sun , D. Piedra , J. Hu , Z. Liu , Y. Lin , X. Gao , K. Shepard , and T. Palacios , in IEEE International Electron Devices Meeting ( IEEE, San Francisco, 2017), p. 215.

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