Silica capping for Al0.3Ga0.7As/GaAs and In0.2Ga0.8As/GaAs quantum well intermixing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122777
Reference11 articles.
1. A dual-wavelength source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD
2. High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure
3. Quantum well intermixing
4. Effects of rapid thermal annealing and SiO2encapsulation on GaInAs/AlInAs heterostructures
5. Multiple wavelength Fabry–Pérot lasers fabricated by vacancy‐enhanced quantum well disordering
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