Anharmonicity of lattice vibrations in thin film α-Ga2O3 investigated by temperature dependent Raman spectroscopy
Author:
Affiliation:
1. Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
2. Korea Institute of Ceramic Engineering and Technology, 15-5, Chungmugong-dong, Jinju, Gyeongsangnam-do 52851, South Korea
Funder
Leibniz ScienceCampus
Korea Institute of Ceramic Engineering and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0074260
Reference26 articles.
1. Electronic Properties of Ga2O3 Polymorphs
2. Current status of Ga2O3power devices
3. Guest Editorial: The dawn of gallium oxide microelectronics
4. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
5. Materials issues and devices of α- and β-Ga2O3
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