Chemical trends of n-type doping of Al, Ga, In, and Ti donors for ZnO polycrystalline films deposited by direct-current magnetron sputtering-Reference-Cited by-同舟云学术

Chemical trends of n-type doping of Al, Ga, In, and Ti donors for ZnO polycrystalline films deposited by direct-current magnetron sputtering

Published:2020-10-14 Issue:14 Volume:128 Page:145303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nomoto Junichi¹^ORCID,Makino Hisao²^ORCID,Tsuchiya Tetsuo¹^ORCID,Yamamoto Tetsuya²^ORCID

Affiliation:

1. Advanced Coating Technology Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5-2, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

2. Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami, Kochi 782-8502, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021613

Reference64 articles.

1. K. Kushiya, S. Kuriyama, I. Hara, Y. Nagoya, M. Tachiyuki, and Y. Fujiwara, in Proceedings of 29th IEEE Photovoltaic Specialists Conference (Institute of Electrical and Electronics Engineers, New Orleans, LA, 2002), p. 579.

2. Ga-doped zinc oxide: An attractive potential substitute for ITO, large-area coating, and control of electrical and optical properties on glass and polymer substrates

3. Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels

4. Effect of surface roughness of ZnO:Al films on light scattering in hydrogenated amorphous silicon solar cells

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