Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy-Reference-Cited by-同舟云学术

Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy

Published:2005-02-15 Issue:4 Volume:97 Page:043516
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ratto Fulvio,Rosei Federico,Locatelli Andrea,Cherifi Salia,Fontana Stefano,Heun Stefan,Szkutnik Pierre-David,Sgarlata Anna,De Crescenzi Maurizio,Motta Nunzio

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1832747

Reference41 articles.

1. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

2. Nanostructured surfaces: challenges and frontiers in nanotechnology

3. Self-organization of nanostructures in semiconductor heteroepitaxy

4. X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface

5. Diffusional Kinetics of SiGe Dimers on Si(100) Using Atom-Tracking Scanning Tunneling Microscopy

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay;Aggregate;2022-04-22

2. Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface;Thin Solid Films;2020-09

3. Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study;Journal of Physics: Condensed Matter;2018-10-25

4. Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy;Surface Science;2018-05

5. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures;Advances in Semiconductor Nanostructures;2017