Effect of H on interface properties of Al2O3/In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3665395
Reference13 articles.
1. Electronic states at the silicon-silicon dioxide interface
2. Hydrogen passivation of a bulk donor defect (Ec−0.36 eV) in GaAs
3. Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks
4. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
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