Low-temperature growth of crystalline GaN films using energetic neutral atomic-beam lithography/epitaxy-Reference-Cited by-同舟云学术

Low-temperature growth of crystalline GaN films using energetic neutral atomic-beam lithography/epitaxy

Published:2006-01-23 Issue:4 Volume:88 Page:041907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mueller Alexander H.,Akhadov Elshan A.,Hoffbauer Mark A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2166485

Reference20 articles.

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2. VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERS

3. Preparation and optical properties of Ga1−xInxN thin films

4. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy

5. p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

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