Characterization of boron‐doped silicon epitaxial layers by x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104982
Reference14 articles.
1. Lattice Distorsion around Charged Impurity in Semiconductors
2. Densitometric and Electrical Investigation of Boron in Silicon
3. X-ray measurement of elastic strain and lattice constant of diffused silicon
4. Perfect Crystal Growth of Silicon by Vapor Deposition
5. X‐Ray Investigation of Boron‐ and Germanium‐Doped Silicon Epitaxial Layers
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