CoSi2heteroepitaxy on patterned Si(100) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363697
Reference36 articles.
1. Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parameters
2. Importance of steps in heteroepitaxy: The case of aluminum on silicon
3. Scanning tunneling microscopy studies of nucleation and growth in a reactive, epitaxial system: Co/Si(111)
4. Nucleation of Co silicide on H passivated Si(111)
5. Phase transition from pseudomorphicFeSi2to β-FeSi2/Si(111) studied byinsituscanning tunneling microscopy
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1. Reactive epitaxy of cobalt disilicide on Si(100);Physics of the Solid State;2002-06
2. Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate and their thermal stability;Microelectronic Engineering;2001-03
3. Microscopy and spectroscopy of buried nanostructures;Journal of Electron Spectroscopy and Related Phenomena;2000-08
4. Mosaic structure of various oriented grains in CoSi[sub 2]/Si(001);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
5. Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate;Applied Physics Letters;1999-11-08
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