Experimental comparison of atomic roughness and Hall mobility inp‐Si inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331878
Reference21 articles.
1. On the role of scattering by surface roughness in silicon inversion layers
2. Coulomb scattering in the band tall of n-channel silicon MOSFETs
3. Oxide thickness effects on electron scatterings at a thermally grown Si‐SiO2 interface
4. Effects of nitrogen annealing on electron scatterings in SiSiO2 interface
5. Temperature dependence of mobility in silicon (100) inversion layers at low temperatures
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