Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3236627
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1. High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films
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3. Optimum semiconductors for high-power electronics
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