Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1484244
Reference11 articles.
1. Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition
2. Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
3. Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures
4. Effect of Stress on Impurity-Free Quantum Well Intermixing
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