Improvement of optical performance of ZnO/GaN p-n junctions with an InGaN interlayer
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4760271
Reference18 articles.
1. Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes
2. Enhancing Light Emission of ZnO Microwire-Based Diodes by Piezo-Phototronic Effect
3. UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering
4. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
5. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
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