Height reversal in Au coverage on MoS2 flakes/SiO2: Thermal control of interfacial nucleation
Author:
Affiliation:
1. Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5094665
Reference28 articles.
1. Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
2. Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film
3. Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition
4. High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
5. Spin-Valve Effect in NiFe/MoS2/NiFe Junctions
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