Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6

Author:

Zeng Qingqi1ORCID,Yi Changjiang1,Shen Jianlei12,Wang Binbin1,Wei Hongxiang1,Shi Youguo13,Liu Enke13ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. Research Institute of Materials Science of Shanxi Normal University, Taiyuan 030000, China

3. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

Abstract

In-plane transport properties, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are of great interest in electrical transport and spintronic applications. Unconventional transport behavior emerging from the topological physics has been intensively studied and very much desired. In this study, a large AMR of −18% at a very low magnetic field of 0.2 T is observed in a soft magnetic Weyl semimetal EuB6 based on the characteristics of both high magnetization and large magnetoresistance. Furthermore, the intrinsic antisymmetric AMR and PHE are unambiguously observed and interpreted as the modification in conductivity owing to the Berry curvature in a tilted Weyl system instead of the out-of-plane magnetic field component. Our study provides a strategy for low-magnetic-field applications of large AMR and enriches the transport physics of spintronic devices.

Funder

Fundamental Science Centre of the National Science Foundation of China

National Natural Science Foundation of China

National Key R&D Program of China

Beijing Natural Science Foundation

Strategic Priority Research Programof the Chinese Academy of Sciences

Key Research Program of CAS

Synergetic Extreme Condition User Facility

Scientific Instrument Developing Project of CAS

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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