High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors-Reference-Cited by-同舟云学术

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High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors

Published:2019-08 Issue:8 Volume:9 Page:085127
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Lei Zicong¹^ORCID,Yan Shaohua¹,Cao Zhiqiang¹,Guo Zongxia²,Song Panshen²,Qiang You³^ORCID,Wang Jun⁴,Zhao Weisheng¹²^ORCID,Leng Qunwen¹⁵^ORCID

Affiliation:

1. Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China

2. Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, China

3. Department of Physics, University of Idaho, Moscow, Idaho 83844-0903, USA

4. School of Electronic and Information Engineering, Beihang University, Beijing 100191, China

5. Goertek Inc., Weifang 261031, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5117320

Reference19 articles.

1. Materials with perpendicular magnetic anisotropy for magnetic random access memory

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Performance analysis of MgO-based perpendicularly magnetized tunnel junctions

4. Basic principles of STT-MRAM cell operation in memory arrays

5. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

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1. Design of energy-efficient hybrid STT-MTJ/CMOS-based LIM logic gates for IoT applications;Measurement: Sensors;2024-04

2. Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-Compatible MTJ Stacks;IEEE Transactions on Magnetics;2023-11

3. Optimizing free layer of Magnetic Tunnel Junction for true random number generator;Memories - Materials, Devices, Circuits and Systems;2023-10

4. Tunneling Magnetoresistance (TMR) Materials and Devices for Magnetic Sensors;Spintronics;2022-07-11

5. Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property;AIP Advances;2022-07-01

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