Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)-Reference-Cited by-同舟云学术

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Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)

Published:2013-02-07 Issue:5 Volume:113 Page:053511
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nakamura K.¹,Baba M.¹,Ajmal Khan M.¹^ORCID,Du W.¹,Sasase M.²,Hara K. O.³,Usami N.³⁴,Toko K.¹,Suemasu T.¹⁴

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. The Wakasa Wan Energy Research Center, Tsuruga, Fukui 914-0192, Japan

3. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

4. Japan Science and Technology Agency, CREST, Tokyo 102-0075, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4790597

Reference33 articles.

1. Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

2. Isostructural BaSi2, BaGe2 and SrGe2: electronic and optical properties

3. Optical Absorption Properties of BaSi2Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy

4. Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon

5. BaSi2and thin film alkaline earth silicides on silicon

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