Deformation‐free overgrowth of reactive ion beam etched submicron structures in InP by liquid phase epitaxy-Reference-Cited by-同舟云学术

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Deformation‐free overgrowth of reactive ion beam etched submicron structures in InP by liquid phase epitaxy

Published:1986-09-22 Issue:12 Volume:49 Page:710-712
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schilling M.,Wünstel K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.97575

Reference11 articles.

1. Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers

2. LPE growth on structured {100} InP substrates and their fabrication by preferential etching

3. Thermal deformation of surface corrugations on InGaAsP crystals

4. Ridge waveguide distributed feedback lasers with electron beam defined gratings

5. Reactive ion beam etching of InP with N2and N2/O2mixtures

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices;Journal of Crystal Growth;2000-12

2. Plasma Processing of III-V Materials;Handbook of Advanced Plasma Processing Techniques;2000

3. New dry-etch chemistries for III–V semiconductors;Materials Science and Engineering: B;1994-07

4. Comparison of plasma chemistries for patterning InP-based laser structures;Plasma Sources Science and Technology;1994-02-01

5. New Dry-Etch Chemistries for III-V Semiconductors;MRS Proceedings;1993

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