Effects of deposition conditions on transport properties of intrinsic hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide films investigated by the photomixing technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114111
Reference22 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Annealing effects of highly homogeneous a-Si1−xCx:H;Journal of Non-Crystalline Solids;2003-11
2. Potential fluctuations, diffusion length and lateral photovoltage in hydrogenated amorphous silicon and silicon-germanium thin films;PHILOS MAG B;2002
3. Potential fluctuations, diffusion length and lateral photovoltage in hydrogenated amorphous silicon and silicon–germanium thin films;Philosophical Magazine B;2002-07
4. Electronic properties of hydrogenated amorphous silicon–germanium alloys and long-range potential fluctuations;Materials Science and Engineering: A;2002-02
5. Transport properties ofa−Si1−xCx:Hfilms investigated by the moving photocarrier grating technique;Physical Review B;2000-11-15
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