Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures-Reference-Cited by-同舟云学术

Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

Published:2014-08-04 Issue:5 Volume:105 Page:052102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Agrawal Ashish,Barth Michael,Madan Himanshu,Lee Yi-Jing,Lin You-Ru,Wu Cheng-Hsien,Ko Chih-Hsin,Wann Clement H.,Loubychev Dmitri,Liu Amy,Fastenau Joel,Lindemuth Jeff,Datta Suman

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892403

Reference14 articles.

1. Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

2. High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

3. Enhancing hole mobility in III-V semiconductors

4. High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture

5. Electronic transport in modulation-doped InSb quantum well heterostructures

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3. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas;Scientific Reports;2016-03-29