Amorphous semiconductor threshold on−state properties as functions of decay time, ambient temperature, and polarity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88133
Reference5 articles.
1. Principles of electrical behavior of amorphous semiconductor alloys
2. Principles of electrical behavior of amorphous semiconductor alloys
3. Principles of electrical behavior of amorphous semiconductor alloys
4. On the mechanism of ovonic threshold switching
5. On the mechanism of ovonic threshold switching
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1. Charge Carrier Transfer at High Electric Fields in Noncrystalline Semiconductors;Semiconductors and Semimetals;2004
2. Threshold switching polycrystalline NbO2: Decay and recovery of the on state at room and low temperatures and its relationship to trapping centers;Journal of Applied Physics;1983-10
3. Single fast-pulsed interruption of on state of amorphous threshold switch:I−Vdecay curve and trapped-carrier lifetime;Physical Review B;1981-01-15
4. Interpretation of amorphous semiconductor threshold switching based on new decay-time data;Physical Review B;1980-08-15
5. Multistate amorphous‐semiconductor switch;Applied Physics Letters;1980-04-15
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