Structure and chemistry of passivated SiC/SiO2 interfaces
Author:
Affiliation:
1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907, USA
2. Power Devices R&D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709, USA
Funder
National Science Foundation (NSF)
U.S. Army Research Laboratory (ARL)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/108/20/1.4951677.pdf?itemId=/content/aip/journal/apl/108/20/10.1063/1.4951677&mimeType=pdf&containerItemId=content/aip/journal/apl
Reference31 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Energy Efficiency: The Commercial Pull for SiC Devices
3. SiC Device Applications: Identifying and Developing Commercial Applications
4. Silicon carbide: A unique platform for metal-oxide-semiconductor physics
5. Critical Issues for MOS Based Power Devices in 4H-SiC
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