EL2 and anion antisite defects in plastically deformed GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346341
Reference15 articles.
1. Arsenic antisite defectAsGaandEL2 in GaAs
2. A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy
3. Identification of AsGaantisites in plastically deformed GaAs
4. Antisite-related defects in plastically deformed GaAs
5. Effect of plastic deformation on electronic properties of GaAs
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1. Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy;PHYS STATUS SOLIDI B;1999
2. High resistivity and ultrafast carrier lifetime in argon implanted GaAs;Applied Physics Letters;1996-10-21
3. Point defects and their reactions in electron-irradiated GaAs investigated by optical absorption spectroscopy;Physical Review B;1996-09-15
4. Ga-Vacancies and AsGa-Antisites in Electron Irradiated GaAs;Materials Science Forum;1995-11
5. Photobehavior of paramagnetic anion antisites in plastically deformed GaAs;Journal of Applied Physics;1992-08-15
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