Current-voltage characteristics of p-GaAs∕n-GaN heterojunction fabricated by wafer bonding
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2710750
Reference18 articles.
1. Cleaved GaN facets by wafer fusion of GaN to InP
2. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor
3. Growth of GaN films on GaAs substrates in an As-free environment
4. Characterization of the bonding strength and interface current of p-Si/n-InP wafers bonded by surface activated bonding method at room temperature
5. Electrical properties of wafer-bonded GaAs/Si heterojunctions
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2. Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy;Japanese Journal of Applied Physics;2020-10-29
3. Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers;CrystEngComm;2020
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