Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
Author:
Affiliation:
1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference18 articles.
1. Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition
2. Integration of thin layers of single-crystalline InP with flexible substrates
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4. Extreme selectivity in the lift‐off of epitaxial GaAs films
5. Epitaxial lift-off of thin InAs layers
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