Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3574093
Reference12 articles.
1. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2. Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels
3. High-k/Ge MOSFETs for future nanoelectronics
4. Electrical properties of high-k HfO2 films on Si1−xGex substrates
5. Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices
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1. Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices;Journal of Nanoscience and Nanotechnology;2020-02-01
2. Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation;Applied Physics Letters;2016-02
3. Size effects in bimagnetic CoO/CoFe2O4core/shell nanoparticles;Nanotechnology;2014-08-13
4. The Role of Sulfur-Passivation in the Stability of HfO2/Ge Structures;ECS Solid State Letters;2013-10-05
5. Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling;Microelectronic Engineering;2013-09
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