Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors-Reference-Cited by-同舟云学术

Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

Published:2014-09 Issue:9 Volume:105 Page:093504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Rui¹²,He Jian¹²,Song Yang³,Li Wei²,Zaslavsky A.¹³,Paine D. C.¹

Affiliation:

1. School of Engineering, Brown University, Providence, Rhode Island 02912, USA

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China

3. Department of Physics, Brown University, Providence, Rhode Island 02912, USA

Funder

Fundamental Research Funds for the central Universities

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894769

Reference15 articles.

1. High-mobility amorphous In2O3–10wt%ZnO thin film transistors

2. Amorphous IZO-based transparent thin film transistors

3. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

4. Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs

5. Room temperature deposited indium zinc oxide thin film transistors

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