Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications
Author:
Affiliation:
1. Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
Funder
Ministry of Internal Affairs and Communications, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5144024
Reference36 articles.
1. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
2. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
3. A Survey of Wide Bandgap Power Semiconductor Devices
4. GaN-on-Si Power Technology: Devices and Applications
5. Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
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