Quantitative investigation of localized ion irradiation effects in n‐channel metal‐oxide‐semiconductor field‐effect transistors using single ion microprobe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116076
Reference12 articles.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Plasma Treatment on Stress Reduction Induced by Shallow Trench Isolation Filled with Spin-on-Glass Dielectric;ECS Transactions;2011-10-04
2. Single-ion irradiation: physics, technology and applications;Journal of Physics D: Applied Physics;2008-01-28
3. Single-ion detection using nuclear track detector CR-39 plastic;Review of Scientific Instruments;1999-12
4. New problems in nuclear microprobe analysis of materials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-09
5. Quantitative characterization of ion-induced SiO2/Si interface traps by means of MeV He single-ion irradiation;Journal of Applied Physics;1999-06
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