The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4714558
Reference13 articles.
1. Local stress determination in shallow trench insulator structures with one-side and two-sides pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization
2. Optimal Stress Design in p-MOSFET With Superior Performance
3. Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
4. Superior n-MOSFET Performance by Optimal Stress Design
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