Depletion‐mode GaAs MOS FET
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88995
Reference5 articles.
1. Gallium arsenide MOS transistors
2. First anodic-oxide GaAs m.o.s.f.e.t.s based on easy technological processes
3. Improved method of anodic oxidation of GaAs
4. New anodic native oxide of GaAs with improved dielectric and interface properties
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1. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs;Applied Physics Letters;1995-05-15
2. Accumulation capacitance for GaAs‐SiO2interfaces with Si interlayers;Applied Physics Letters;1990-10-29
3. Studies of GaAs–oxide interfaces with and without Si interlayer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-07
4. Unpinned (100) GaAs surfaces in air using photochemistry;Applied Physics Letters;1986-02-17
5. Interfacial Constraints on III-V Compound MIS Devices;Physics and Chemistry of III-V Compound Semiconductor Interfaces;1985
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