Above‐band‐gap linear electro‐optic coefficients of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349309
Reference11 articles.
1. Above-bandgap optical anisotropies in the reflectance spectra of some cubic semiconductors
2. Reflectance–difference spectroscopy of (110) GaAs and InP
3. Intrinsic Surface-Induced Optical Anisotropies of Cubic Crystals: Local-Field Effect
4. Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAs
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1. Determination of the complex linear electro-optic coefficient of GaAs and InP;physica status solidi (b);2010-06-24
2. Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces;Solid State Communications;2001-09
3. Local-Field Effects in Reflectance Anisotropy Spectra of the (001) Surface of Gallium Arsenide;Physics of the Solid State;2001-06
4. Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs;Applied Physics Letters;1998-09-14
5. Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs;Physical Review B;1997-03-15
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