Analysis of x-ray diffraction as a probe of interdiffusion in Si/SiGe heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1589600
Reference19 articles.
1. Atomically flat interface in SiGe/Si heterostructures formed by solid phase epitaxy: Significant increase in two-dimensional electron mobility
2. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors
3. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
4. Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
5. Thermal stability of undoped strained Si channel SiGe heterostructures
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