Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328705
Reference11 articles.
1. Molecular beam epitaxy
2. P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs
3. Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy
4. Germanium doping of gallium arsenide grown by molecular beam epitaxy — Some thermodynamic aspects
5. ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’
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