Surface stoichiometry, structure, and chemisorption on silicon nitride studied by direct recoiling, x‐ray photoelectron spectroscopy, and Auger electron spectroscopy-Reference-Cited by-同舟云学术

Surface stoichiometry, structure, and chemisorption on silicon nitride studied by direct recoiling, x‐ray photoelectron spectroscopy, and Auger electron spectroscopy

Published:1986-10 Issue:7 Volume:60 Page:2564-2572
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jo Yang‐Sun,Schultz J. Albert,Tachi Shinichi,Contarini Salvatore,Rabalais J. Wayne

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.337122

Reference23 articles.

1. Silicon oxynitride films prepared by plasma nitridation of silicon and their application for tunnel metal‐insulator‐silicon diodes

2. Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas

3. The Detection of Silicon-Oxynitride Layers on the Surfaces of Silicon-Nitride Films by Auger Electron Emission

4. Surface Oxidation of Silicon Nitride Films

5. Conversion of silicon nitride into silicon dioxide through the influence of oxygen

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