Assessment of density of states extraction from the space charge limited current measurement: A numerical simulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352015
Reference9 articles.
1. Evidence of space-charge-limited current in amorphous silicon Schottky diodes
2. Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes
3. DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
4. Space‐charge‐limited currents: Refinements in analysis and applications toa‐Si1−xGex: H alloys
5. Range of validity of the surface‐photovoltage diffusion length measurement: A computer simulation
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1. Evaluation of the gap state distribution in a-Si:H by SCLC measurements;Solar Energy Materials and Solar Cells;2003-04
2. Analysis of the structural parameters of an a-Si : H n(+)-i-n(+) structure by numerical simulations;Journal of Materials Science: Materials in Electronics;2003
3. Evaluation Of The Gap State Distribution In a-Si:H By SCLC Measurements;Photovoltaic and Photoactive Materials — Properties, Technology and Applications;2002
4. Space-Charge-Limited Currents in n-i-n Devices Incorporating Glow-Discharge and Hot-Wire Deposited a-Si:H;MRS Proceedings;1997
5. Use of space-charge-limited current to evaluate the electronic density of states in diamond-like carbon thin films;Thin Solid Films;1994-12
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