Atomic structure of (110) anti-phase boundaries in GaP on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4815985
Reference17 articles.
1. Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
2. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
3. Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
4. Polar-on-nonpolar epitaxy
5. Antiphase-Domain-Free InP on (100) Si
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