Structural transition and recovery of Ge implanted β-Ga2O3-Reference-Cited by-同舟云学术

Structural transition and recovery of Ge implanted β-Ga2O3

Published:2020-10-12 Issue:15 Volume:117 Page:152101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Anber Elaf A.¹^ORCID,Foley Daniel¹,Lang Andrew C.²,Nathaniel James¹,Hart James L.¹,Tadjer Marko J.³^ORCID,Hobart Karl D.³^ORCID,Pearton Stephen⁴^ORCID,Taheri Mitra L.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles Street, Baltimore, Maryland 21218, USA

2. American Society for Engineering Education, 1818 N. Street Suite 600, Washington DC 20018, USA

3. US Naval Research Laboratory, 4555 Overlook Ave SW, Washington DC 20375, USA

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

National science foundation program

The Department of the Defense, Defense Threat Reduction Agency

U.S. Department of Energy

Office of Naval Research Global

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0022170

Reference31 articles.

1. Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

2. Group-III Sesquioxides: Growth, Physical Properties and Devices

3. Guest Editorial: The dawn of gallium oxide microelectronics

4. Perspective—Opportunities and Future Directions for Ga2O3

5. A review of Ga2O3materials, processing, and devices

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