Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Published:2021-11-28 Issue:20 Volume:130 Page:205704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Xiaorui¹²,Wang Tao³,Yu Dapeng²,Xu Shijie¹^ORCID

Affiliation:

1. Department of Physics and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China

2. Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

3. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

Funder

National Natural Science Foundation of China

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0064466

Reference34 articles.

1. Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

2. Temperature dependent photoluminescence of composition tunable Zn_xAgInSe quantum dots and temperature sensor application

3. Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density

4. Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors

5. Transfer of Energy Between Centres in Zinc Sulphide Phosphors

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