Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3-Reference-Cited by-同舟云学术

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Published:2020-08-03 Issue:5 Volume:117 Page:052901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rodriguez Justin R.¹²^ORCID,Murray William²³,Fujisawa Kazunori¹²,Lee Seng Huat¹²^ORCID,Kotrick Alexandra L.¹²,Chen Yixuan¹²,Mckee Nathan¹²^ORCID,Lee Sora²⁴,Terrones Mauricio¹²,Trolier-McKinstry Susan²⁴^ORCID,Jackson Thomas N.²³,Mao Zhiqiang¹²^ORCID,Liu Zhiwen²³,Liu Ying¹²^ORCID

Affiliation:

1. Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA

3. Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA

4. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0014945

Reference31 articles.

1. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

2. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

3. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

4. Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

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