Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3583463
Reference16 articles.
1. MRS Symposia Proceedings;Wilk G.,2002
2. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, Hoboken, NJ, 2003), p. 477.
3. Accurate determination of flat band voltage in advanced MOS structure
4. A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling
5. Direct measurement of flat‐band voltage in MOS by infrared excitation
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1. Electric-Field-Induced Second-Harmonic Generation Demonstrates Different Interface Properties of Molecular Beam Epitaxy Grown MgO on Si;The Journal of Physical Chemistry C;2014-01-15
2. Tunneling of holes is observed by second-harmonic generation;Applied Physics Letters;2013-02-25
3. Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al$_{2}$O$_{3}$/InP Heterostructures with Various Surface Orientations (001), (110), and (111);Applied Physics Express;2012-06-06
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