Inhomogeneous defect distribution of triangular WS2 monolayer revealed by surface-enhanced and tip-enhanced Raman and photoluminescence spectroscopy-Reference-Cited by-同舟云学术

Inhomogeneous defect distribution of triangular WS2 monolayer revealed by surface-enhanced and tip-enhanced Raman and photoluminescence spectroscopy

Published:2022-01-21 Issue:3 Volume:156 Page:034702
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Miao Peng¹²³,Chen Yu-Ting¹³,Pan Lin¹³⁴^ORCID,Horneber Anke¹³,Greulich Katharina¹³,Chassé Thomas¹³,Peisert Heiko¹³^ORCID,Adam Pierre-Michel⁴,Xu Ping²,Meixner Alfred¹³^ORCID,Zhang Dai¹³^ORCID

Affiliation:

1. Institute of Physical and Theoretical Chemistry, Eberhard Karls University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany

2. Harbin Institute of Technology, Harbin, People’s Republic of China

3. Center for Light-Matter-Interaction, Sensors and Analytics (LISA+), Eberhard Karls University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany

4. Laboratoire Lumière, nanomatériaux et nanotechnologies – L2n, Université de Technologie de Troyes & CNRS EMR 7004, 12 Rue Marie Curie, CS42060, 10004 Troyes Cedex, France

Funder

China Scholarship Council

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0078113

Reference50 articles.

1. Recent Advances in Two-Dimensional Materials beyond Graphene

2. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

3. Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers

4. Single-Layer MoS2 Electronics

5. Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

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