High‐contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode-Reference-Cited by-同舟云学术

High‐contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode

Published:1991-09-23 Issue:13 Volume:59 Page:1523-1525
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Li,Kapre R. M.,Hu Kezhong,Madhukar A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.106270

Reference9 articles.

1. Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device

2. Symmetric self‐electro‐optic effect device: Optical set‐reset latch

3. Room‐temperature electroabsorption and switching in a GaAs/AlGaAs superlattice

4. Self‐electro‐optic device based on a superlattice asymmetric Fabry–Perot modulator with an on/off ratio ≳100:1

5. Novel quantum-well optical bistability device with excellent on/off ratio and high speed capability

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1. Multi-Gigahertz Optoelectronic Devices;New Directions in Terahertz Technology;1997

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