Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753762
Reference16 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory
3. Proceedings of the IEEE 25th International Conference on Microelectronics;Cherkaoui K.,2007
4. Characterisation of HfO2 deposited by photo-induced chemical vapour deposition
5. Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures
Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment;IEEE Electron Device Letters;2022-06
2. Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment;Surface and Coatings Technology;2021-10
3. Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology;Micromachines;2021-05-18
4. Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO2 Treatment With H2O2Cosolvent;IEEE Electron Device Letters;2021-05
5. Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology*;Chinese Physics B;2020-12-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3