Influence of melt composition on the longitudinal distribution of midgap native donor concentration in semi‐insulating liquid‐encapsulated Czochralski GaAs crystal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337747
Reference22 articles.
1. Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
2. Two‐dimensional microscopic uniformity of resistivity in semi‐insulating GaAs
3. Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
4. Electron traps in bulk and epitaxial GaAs crystals
5. Compensation in GaAs crystals due to anti-structure disorder
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1. Investigation of the electrophysical parameter distribution in crystals by a multiprobe method;Acta Physica Hungarica;1991-08
2. Electrical inhomogeneity in Ga‐rich undoped GaAs crystals: Dependence on melt stoichiometry and dislocation distribution;Journal of Applied Physics;1990-05
3. Structural and electrical properties ofn-type bulk gallium arsenide grown from non-stoichiometric melts;Journal of Electronic Materials;1989-03
4. Dislocation loops and precipitates associated with excess arsenic in GaAs;Journal of Applied Physics;1988-07
5. Microscopic spatial fluctuations of the EL2 defect in semi‐insulating GaAs: Influence on bulk resistivity and correlation with implant activation;Applied Physics Letters;1988-05-16
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