Doping-induced band edge displacements and band gap narrowing in 3C–, 4H–, 6H–SiC, and Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368374
Reference7 articles.
1. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers
2. Band-gap narrowing in heavily doped many-valley semiconductors
3. Band-gap shifts in heavily dopedn-type GaAs
4. Energy gap in Si and Ge: Impurity dependence
5. Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap
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