Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Published:2013-09-30 Issue:14 Volume:103 Page:143509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Taoka Noriyuki,Yokoyama Masafumi,Hyeon Kim Sang,Suzuki Rena,Lee Sunghoon,Iida Ryo,Hoshii Takuya,Jevasuwan Wipakorn,Maeda Tatsuro,Yasuda Tetsuji,Ichikawa Osamu,Fukuhara Noboru,Hata Masahiko,Takenaka Mitsuru,Takagi Shinichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824474

Reference16 articles.

1. Electron mobility and energy gap of In0.53Ga0.47As on InP substrate

2. Band parameters for III–V compound semiconductors and their alloys

3. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

4. Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

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